M-Polynomial and Degree Based Topological Indices for Silicon Oxide

Main Article Content

P. J. N. Thayamathy
P. Elango
M. Koneswaran

Abstract

Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.

Keywords:
M-polynomials, chemical graph theory, silicon oxide, topological index

Article Details

How to Cite
J. N. Thayamathy, P., Elango, P., & Koneswaran, M. (2018). M-Polynomial and Degree Based Topological Indices for Silicon Oxide. International Research Journal of Pure and Applied Chemistry, 16(4), 1-9. https://doi.org/10.9734/IRJPAC/2018/42645
Section
Original Research Article