M-Polynomial and Degree Based Topological Indices for Silicon Oxide
P. J. N. Thayamathy
Department of Mathematics, Faculty of Science, Eastern University, Sri Lanka
P. Elango *
Department of Mathematics, Faculty of Science, Eastern University, Sri Lanka
M. Koneswaran
Department of Chemistry, Faculty of Science, Eastern University, Sri Lanka
*Author to whom correspondence should be addressed.
Abstract
Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.
Keywords: M-polynomials, chemical graph theory, silicon oxide, topological index