M-Polynomial and Degree Based Topological Indices for Silicon Oxide

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P. J. N. Thayamathy
P. Elango
M. Koneswaran


Silican oxide (SiO2) is the most abundant oxide present on the surface of the earth which has a wide spectrum of technological applications due to it's various chemical and physical properties. The topological index is a numerical representation of a molecular structure. The first topological index in chemical graph theory is the Winer index which is a distance-based topological index. The degree-based topological indices are the most studied type of topological indices which play a prominent role in chemical graph theory. In this paper, we derive the M-Polynomial for Silican oxide SiO2 layer structure and calculate some of the important degree based topological indices using this M-polynomial. We derive the M-Polynomial derivative formula for the ABC-index and calculate the ABC-index by using this derived formula.

M-polynomials, chemical graph theory, silicon oxide, topological index

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How to Cite
J. N. Thayamathy, P., Elango, P., & Koneswaran, M. (2018). M-Polynomial and Degree Based Topological Indices for Silicon Oxide. International Research Journal of Pure and Applied Chemistry, 16(4), 1-9. https://doi.org/10.9734/IRJPAC/2018/42645
Original Research Article